The device is designed for express non-destructive contactless local measurement of non-equilibrium charge carrier effective lifetime in silicon substrates, epi-wafers and solar cells at different stages of manufacturing cycle. It can be used for incoming and outcoming inspection of silicon ingots and wafers, tuning and periodic inspection of semiconductor and solar cell technology quality. Lifetime determination is based on measuring photoconductivity decay after pulselight photo-exciting with usage of reflected microwave as a probe.  * Application : Silicon Ingots
[Specification ]
Parameter
Nominal
Accuracy
 Laser Light Diode Radiation
 Wave Length
980nm
30
 Power in measurement  area adjustment  range
50~500mW
 Pulse width adjustment  range
0.5~60 s
 Microwave Generator  Operation  Frequency
10GHz
0.5
 Microwave power at the  measurement  unit
0.01W
10%
 Measurable Wafer Resistivity Range, Ohm.cm
 for p-type specification
0.8 ~100Ohm.
 
 for n-type specification
0.8 ~100Ohm.
 
 Dimensions
 measurement head
290x200x65mm
 
 electronic unit
210x220x60mm
 
 Power
AC 220V,
50 Hz, 30W
 
 
 



 
 
 
This is for contactless lifetime measuring and mapping device for non equilibrium carrier lifetime inspection at silicon mono and multi crystalline ingots. Lifetime determination is based on measuring photoconductivity decay after pulse light photo-exciting with usage of reflected microwave as probe. It enables repetition and contactless of measurement and does not require special surface treatment before measurement or wafer cutting.
* Application : Silicon mono & Multi crystalline Ingots
[ Specification ]
Parameter
Nominal
Accuracy
 Laser Light Diode Radiation
 Wave Length
980 nm
30
 Power in  measurement  area  adjustment  range
50~500mW
 Microwave  Generator  Operation  Frequency
10GHz
0.5
 Microwave  power at the  measurement  unit
0.01W
10%
 Measurable Wafer Resistivity Range,  Ohm.cm
 for p-type  specification
0.8~100Ohm.
 
 for n-type  specification
0.8~100Ohm.
 
 Scanning surface dimensions
 length
400mm
 
 width
210mm
 
 Ingot cross  section
Up to 215x215mm
 
 Scan step, no  less than
no less than 1mm
 
 Discontinuity of  step changing
1mm
 
 Line scanning  speed,  mm/min  2000
2000 mm/min
 
 Power
AC 220V, 50 Hz, 200W
 
 



 
 
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